Plasma etchant mixture

Details Plasma etchant mixture Plasma etchant mixture

1983-03-23

1984-09-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 2130, C03C 1500, C03C 2506, B44C 122

Patent

active

044734352

ABSTRACT:
Method and apparatus for masked etching of a polysilicon surface layer or film to expose a dielectric underlying layer or film on a semiconductor material using ion bombardment from an ionized mixture of a fluorine based gas with a chlorine or bromine containing gas. A particularly useful gas is a mixture of sulfur hexafluoride and Freon 115 gases (C.sub.2 ClF.sub.5). The mixture of gases achieves the result of highly selective etching through the polysilicon film without significantly attacking the underlying dielectric film and without significant undercutting in the polysilicon film or etching of the masking layer.

REFERENCES:
patent: 4162185 (1979-07-01), Coburn et al.
patent: 4314875 (1982-02-01), Flamm
Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, Plasma-Assisted Etching, by S. W. Coburn, pp. 1-41.

Affiliated with

Also associated with

Rating

Plasma etchant mixture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma etchant mixture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma etchant mixture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1768495