Method for forming a barrier metal film with conformal step cove

Details Method for forming a barrier metal film with conformal step cove Method for forming a barrier metal film with conformal step cove

1996-12-31

1999-05-18

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438669, 438725, 438737, H01L21/28;21/3065

Patent

active

059045612

ABSTRACT:
A method for forming a barrier metal film with conformal step coverage in a semiconductor integrated circuit includes forming a photoresist plug in a barrier metal lined contact or via hole. The barrier metal film has an overhang that narrows the opening to the contact or via hole. The barrier metal film is then etched using a fluorine based plasma etch process to remove the overhang. The photoresist plug is then removed using a oxygen based plasma etch process. The contact or via hole is then filled with tungsten to form a tungsten plug.

REFERENCES:
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 5084413 (1992-01-01), Fujita et al.
patent: 5427981 (1995-06-01), Choi
patent: 5484747 (1996-01-01), Chien
patent: 5654233 (1997-08-01), Yu
patent: 5693562 (1997-12-01), Tseng
patent: 5739047 (1998-04-01), Chiang
Wolf, S., et al., Silicon Processing for the VLSI Era, vol. 1, 1986, Lattice Press, pp. 539-546, 564-565, 581-582.

Affiliated with

Also associated with

Rating

Method for forming a barrier metal film with conformal step cove does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a barrier metal film with conformal step cove, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a barrier metal film with conformal step cove will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1755996