Cleaning step which improves electromigration performance of int

Details Cleaning step which improves electromigration performance of int Cleaning step which improves electromigration performance of int

1996-03-29

1999-05-18

Glass, Margaret W.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 134 2, 427560, H01L21/28

Patent

active

059045604

ABSTRACT:
An improved cleaning step for cleaning interconnects such as tungsten filed vias or contacts. After the tungsten plugs have been formed substantially coplanar with the surrounding dielectric surface (or adhesion or barrier layer surface), the wafers are cleaned in a sequence of chemicals that finishes in a solution that includes hydrogen peroxide. The temperature and concentrations of the active agents are chosen such that etching is minimized until the application of sonic energy. This light etching of the interconnect tungsten and cleaning of the exposed surface has been found to better prepare these surfaces for receiving an overlying metal layer. The electromigration performance of the overlying metal layer shows substantial improvement when this cleaning step is used. The cleaning step is used following an ethylene glycol-HF mixture cleaning step, dependent on the degree of interconnect and dielectric coplanarity after the tungsten etch step. The prior art step of argon sputtering is not needed to obtain the improved electromigration performance. Device yields may be substantially improved depending on the level of wafer cleanliness prior to the application of the clean.

REFERENCES:
patent: 4242698 (1980-12-01), Ghate et al.
patent: 4632725 (1986-12-01), Hartmann et al.
patent: 4948459 (1990-08-01), Van Laarhoven et al.
patent: 5376585 (1994-12-01), Lin et al.
patent: 5536683 (1996-07-01), Lin et al.

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