Semiconductor processing method of providing dopant impurity int

Details Semiconductor processing method of providing dopant impurity int Semiconductor processing method of providing dopant impurity int

1997-11-05

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L21/336

Patent

active

059045329

ABSTRACT:
A semiconductor processing method of providing dopant impurity into a semiconductor substrate includes: a) providing a semiconductor substrate, the substrate comprising a first bulk region having a blanket doping of a first conductivity type dopant, the substrate comprising a second bulk region having a blanket doping of a second conductivity type dopant; b) defining field oxide regions and active area regions in each of the first and second bulk substrate regions; c) in the same masking step, masking active area regions of the first bulk substrate region while leaving field oxide regions of the first bulk substrate region unmasked and masking field oxide regions of the second bulk substrate region while leaving select active area regions of the second bulk substrate region unmasked; and d) in the same ion implanting step, ion implanting first conductivity type impurity through the unmasked portions of the first and second bulk substrate regions to simultaneously form channel stop isolation implants beneath the unmasked field oxide regions in the first bulk substrate region and electrically conductive active area implants in the unmasked active area regions of the second bulk substrate region.

REFERENCES:
patent: 4607429 (1986-08-01), Kosonocky
patent: 4994407 (1991-02-01), Custode et al.
patent: 5004701 (1991-04-01), Motokawa
patent: 5075242 (1991-12-01), Nakahara
patent: 5382820 (1995-01-01), Yang et al.
patent: 5393693 (1995-02-01), Ko et al.

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