Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-26
1999-05-18
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438278, H01L21/8246
Patent
active
059045264
ABSTRACT:
A ROM device of the type including an array of diode-type memory cells and a method for fabricating the same are provided. The bit lines of this ROM device are a plurality of diffusion regions formed in an alternate manner on the bottom of a plurality of parallel-spaced trenches and on the top of the solid portions between these trenches. This particular arrangement of the bit lines allows for an increased integration of the diode-type memory cells on a limited wafer surface without having to reduce the feature size of the semiconductor components of the ROM device. The diode-type memory cells that are set to a permanently-ON state involve a P-N junction diode being formed therein, wherein the P-N junction diode is electrically connected via a contact window in an insulating layer to the associated one of the overlaying word lines. Other memory cells that are set to a permanently-OFF state are formed with no P-N junction diode therein.
REFERENCES:
patent: 5744393 (1998-04-01), Risch et al.
patent: 5846865 (1998-12-01), Sheng et al.
Chou Jih-Wen
Wen Jemmy
Tsai Jey
United Microelectronics Corp.
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