Method of manufacturing Bi-CMOS

Details Method of manufacturing Bi-CMOS Method of manufacturing Bi-CMOS

1997-06-19

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, 257378, 148DIG9, H01L21/8238

Patent

active

059045191

ABSTRACT:
A method of manufacturing a semiconductor device made up of a Bi-CMOS integrated circuit with the performance of MOS and bipolar elements enhanced. A semiconductor substrate surface is selectively oxidized to divide surface into a bipolar element forming area and a MOS element forming area. Next, the entire substrate surface is oxidized to form an oxide film 9, after which high-density ions are implanted into a collector leading area. Then, driving-in of the collector leading area is performed by performing heat treatment in an oxidizing atmosphere while forming an oxide film 9b on the collector leading area and another oxide film 9a on the MOS element forming area. Subsequently, the oxide film is etched all over the semiconductor substrate surface by the thickness of the oxide film 9a to expose the semiconductor substrate surface of the MOS element forming area. Lastly, the substrate surface is entirely oxidized to form a gate insulation film thinner than the oxide film 9.

REFERENCES:
"Semiconductor Devices--Basic Theory And Process Technology", published by Sangyo Tosho, May 25, 1987 pp. 356-369.

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