Semiconductor device and method for manufacturing the same, and

Details Semiconductor device and method for manufacturing the same, and Semiconductor device and method for manufacturing the same, and

1999-08-26

2000-11-28

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438637, 438672, 438396, H01L 214763

Patent

active

061535109

ABSTRACT:
In a semiconductor device constituted using a borderless contact technique, for example, when a wiring layer with a damascene structure is connected to its underlying contact portion, a trench connect g with the contact portion is formed in the second interlayer insulation film. After that, the contact portion protruded from the bottom of the trench is selectively etched to flatten the bottom of the trench to remove a very small recess from that bottom of the trench which corresponds to a contact face between the contact portion and wiring layer. Thus, both a barrier metal layer and a metal layer for forming the wiring layer can be formed in the trench with higher reliability and accordingly the wiring layer and contact portion can be brought into reliable contact with each other. In a DRAM using a simple stacked capacitor, the storage electrode and plug portion can be put into reliable contact with each other.

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