Furnace for manufacturing a semiconductor device, and a method o

Details Furnace for manufacturing a semiconductor device, and a method o Furnace for manufacturing a semiconductor device, and a method o

1995-07-07

1997-05-20

Niebling, John

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438935, 438909, H01L 21318

Patent

active

056311990

ABSTRACT:
A furnace for manufacturing a semiconductor device and a method of forming a gate oxide film by utilizing the same is disclosed, which can decrease the budget of the device and improve the quality of the oxide film. First N.sub.2 O gas in a source furnace maintained at a high temperature. This eliminates factors contributing to poor quality. These factors include the increase of H.sub.2 generated as a result of the difference in the resolving temperatures of N.sub.2 O and NH.sub.3 in the oxidization process. Also, the invention results in the oxidizing a selected portion of a wafer by making N.sub.2 O and NH.sub.3 react in the main furnace maintained at low temperature.

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