Process and structure of a modified T-shaped capacitor having a

Details Process and structure of a modified T-shaped capacitor having a Process and structure of a modified T-shaped capacitor having a

1998-08-11

2000-03-14

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257296, 257308, 438396, 438397, H01L 27108

Patent

active

060376244

ABSTRACT:
A method is provided for manufacturing a capacitor with a unique sturcture. The capacitor includes a structure formed in the dielectric layer and the etching stop layer and forming a contact window, a conducting material-adhering layer formed on a portion of the etching stop layer neighboring to the contact window, a first conducting layer filling in the contact window and upwardly extended to form a generally cross-sectionally modified T-shaped structure with a rough top surface, and a rugged conducting layer formed inside the first conducting layer and on the conducting material-adhering layer. This method significantly increases the density and intensity of the capacitor.

REFERENCES:
patent: 5227651 (1993-07-01), Kim et al.
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5608247 (1997-03-01), Brown
patent: 5760434 (1998-06-01), Zahurak et al.
patent: 5763913 (1998-06-01), Jeong
patent: 5801413 (1998-09-01), Pan

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