Method of manufacturing semiconductor device having a peak conce

Details Method of manufacturing semiconductor device having a peak conce Method of manufacturing semiconductor device having a peak conce

1997-10-23

1999-06-22

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, 438298, H01L 2976

Patent

active

059151846

ABSTRACT:
A semiconductor device includes a field insulating film, a channel stopper, and a diffusion layer. The field insulating film is formed on one major surface of a semiconductor substrate of a first conductivity type to surround an element region. The channel stopper of the first conductivity type is formed immediately below the field insulating film. The diffusion layer of an opposite conductivity type is formed to be adjacent to the channel stopper. The impurity concentration peak position of the diffusion layer substantially coincides with that of the channel stopper.

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