Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-01-06
1997-03-18
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257601, 257603, H01L 2976, H01L 31062
Patent
active
056125640
ABSTRACT:
A semiconductor device with a metal-insulator-semiconductor transistor and a limiter or sacrifice diode has predetermined breakdown voltage and constant withstand voltage. The device includes a special well region underlying a drain portion or contacting an edge of a drain portion.
REFERENCES:
patent: 5077590 (1991-12-01), Fujihira
patent: 5204988 (1993-04-01), Sakurai
patent: 5336920 (1994-08-01), Jimenez
patent: 5357126 (1994-10-01), Jimenez
patent: 5442216 (1995-08-01), Gough
patent: 5475252 (1995-12-01), Merrill et al.
Fujishima Naoto
Tada Gen
Crane Sara W.
Fuji Electric & Co., Ltd.
Ostrowski David
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