Purged lower liner

Etching a substrate: processes – Gas phase etching of substrate

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118715, C23C 1600

Patent

active

059140500

ABSTRACT:
Chemical vapor deposition apparatus 10 which includes a chemical vapor deposition processing chamber 12 having a base ring 18 and upper and lower quartz windows 20 and 22, and a quartz liner 26 lining the base ring 18, wherein a purge channel 46 is formed, in an outer surface of the liner 26, to remove contaminant material from an interface between the base ring 18 and the liner 26.

REFERENCES:
patent: 4666734 (1987-05-01), Kamiya
patent: 5065698 (1991-11-01), Koike

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