Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1991-03-11
1993-07-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257762, 257768, 228123, 2281802, 228215, 228220, H01L 2348, H01L 2944, H01L 2952, H01L 2960
Patent
active
052257118
ABSTRACT:
The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.
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Chang Chin-An
Koopman Nicholas G.
Roldan Judith M.
Srivastava Kamalesh K.
Strickman Steven
Hille Rolf
International Business Machines - Corporation
Morris Daniel P.
Ostrowski David
Riddles Alvin J.
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