Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-12
1999-06-08
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257329, 257339, 257394, H01L 2976, H01L 2980
Patent
active
059106662
ABSTRACT:
A high-voltage MOS (metal-oxide semiconductor) device and a method for fabricating the same is provided. The high-voltage MOS device features the forming of trench-type source/drain structure in substitute of conventional highly doped structure formed by implantation. The improved structure allows the source/drain regions to occupy a small area for layout on the chip. In addition, the forming of the trench-type source/drain structure in N-wells allows an increased current path from the source/drain regions to drift regions, meaning that the conductive path for the current is not limited to only the junction between the source/drain regions and the drift regions as in conventional structures. Moreover, since the trench-type source/drain structure extends upwards from the inside of N-wells to above the surface of isolation layers, metal contact windows can be formed above the isolation layers, thus preventing the occurrence of leakage current.
REFERENCES:
patent: 4803173 (1989-02-01), Sill et al.
patent: 4860084 (1989-08-01), Shibata
patent: 5614751 (1997-03-01), Yilmaz et al.
Jr. Carl Whitehead
United Microelectronics Corporation
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