Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

1998-04-06

2000-02-08

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, H01L 218247

Patent

active

06022777&

ABSTRACT:
When a control gate electrode 7 is processed using a control gate electrode processing mask 8, the control gate electrode 7 in a region where the floating gate electrode 4 has been removed is partially left. Because of the presence of the left control gate electrode 7, the gate electrode interlayer insulating film 6 and gate insulating film 3 below the control gate electrode 7 are not dug in the region where the floating gate electrode 4 has been removed. Therefore, when the floating gate electrode 4 is removed, the semiconductor substrate is not dug. In this way, since the semiconductor substrate 1 is not dug, the semiconductor memory device can be manufactured stably and precisely.

REFERENCES:
patent: 5330924 (1994-07-01), Huang et al.
patent: 5432110 (1995-07-01), Inoue
patent: 5753525 (1998-05-01), Hsu et al.
A 0.67um2 Self-Aligned Shallow Trench Isolation Cell(SA-STI Cell) For 3V-only 256Mbit NAND EEPROMs, S. Aritome et al., 1994 IEEE, pp. 3.6.1-3.6.4.
"A New Cell Structure For Sub-Quarter Micron High Density Flash Memory", Yoshimitsu Yamauchi et al., 1995 IEEE, pp. 11.2.1-11.2.4.

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