Semiconductor memory with multiplexed redundancy

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3652257, G11C 2900

Patent

active

053553403

ABSTRACT:
An integrated circuit memory is disclosed which includes redundant columns associated with a sub-array, and in which multiple input/output terminals are placed in communication with multiple columns in the sub-array in read and write cycles. The number of redundant columns per sub-array is less than the number of input/output terminals. A multiplexer connects the selected redundant column to a selected sense amplifier and write circuit for the input/output with which the replaced column was associated. The multiplexer includes pass gates connected to the bit lines of the redundant column, and fuses connected between each of the pass gates and each of the sense/write circuits selectable for the redundant column. Those of the fuses which are not associated with the selected input/output are opened, and the fuses associated with the selected input/output are left intact. Precharge transistors are connected to the fuse sides of the pass gates, for precharging each of the floating nodes after the pass gates are turned off. This precharging negates the effect of any charge which may be trapped on the fuse side of the pass gates for those lines where the fuses are opened, so that the access time for the next cycle will not be degraded.

REFERENCES:
patent: 4228528 (1980-10-01), Cenker et al.
patent: 4471472 (1984-09-01), Young
patent: 4573146 (1986-02-01), Graham et al.
patent: 4599709 (1986-07-01), Clemons
patent: 4656610 (1987-04-01), Yoshida et al.
patent: 4691300 (1987-09-01), Pelley, III et al.
patent: 4817056 (1989-03-01), Furutani et al.
patent: 4858192 (1989-08-01), Tatsumi et al.
patent: 4984205 (1991-01-01), Sugibayashi
patent: 5122987 (1992-06-01), Kihara
Hardee, et al., "A Fault-Tolerant 30 ns/375 mW 16K.times.1 NMOS Static RAM", J. Solid State Circuits, vol. SC-16, No. 5 (IEEE, 1981), pp. 435-43.
Childs, et al., "An 18 ns 4K.times.4 CMOS SRAM", J. Solid State Circuits, vol. SC-19, No. 5 (IEEE, 1984), pp. 545-551.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory with multiplexed redundancy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory with multiplexed redundancy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory with multiplexed redundancy will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1664295

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.