MOS-cascoded bipolar current sources in non-epitaxial structure

Details MOS-cascoded bipolar current sources in non-epitaxial structure MOS-cascoded bipolar current sources in non-epitaxial structure

1986-09-29

1987-07-07

Miller, Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307296R, 307304, 357 43, 323312, H03K 320, H03K 3353, H01L 2702, G05F 304

Patent

active

046789367

ABSTRACT:
A 16-bit D/A converter formed on a single monolithic chip and having two cascaded stages each including a 256-R resistor string DAC. The analog output voltage of the first stage is coupled to the second stage by two buffer amplifiers each formed by a non-epitaxial process using a P-type substrate. The amplifiers include NMOS and PMOS-cascoded bipolar current sources arranged to avoid the use of metallization to provide for electrical interconnections within the source.

REFERENCES:
patent: 3609479 (1971-09-01), Lin
patent: 3622812 (1971-11-01), Crawford
patent: 3838440 (1974-09-01), McCaffrey et al.
patent: 4069494 (1978-01-01), Grundy
patent: 4402003 (1983-08-01), Blanchard
patent: 4587495 (1986-05-01), Osawa et al.
patent: 4604535 (1986-08-01), Sasayama et al.

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