High energy beam-sensitive copolymer

Details High energy beam-sensitive copolymer High energy beam-sensitive copolymer

1989-08-09

1991-05-14

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430270, 5253306, 5253273, 5253288, 5253594, 5253303, 5253289, 5262923, 5262924, C03C 500, C08F 1626, C08F 818, C08F 1800

Patent

active

050155580

ABSTRACT:
A novel copolymer containing a plurality of first and second monomer units having the following general formulas (I) and (II), respectively: ##STR1## wherein R.sub.1 stands for hydrogen or methyl and Ar stands for an aryl, ##STR2## wherein R.sub.2 stands for hydrogen or methyl and X stands for -CH.sub.2 CH.sub.2 -, -CH.sub.2 CH(OH)CH.sub.2 - or -CH.sub.2 CH(CH.sub.2 OH)- and Y stands for o- or p-chlorophenyl, the molar ratio of the first monomer unit to the second monomer unit being 94:6 to 98:2. The copolymer becomes insoluble to a developing liquid when exposed to high energy radiations and is used for forming resist pattern on a silicon wafer or the like substrate.

REFERENCES:
patent: 2857354 (1958-10-01), Fang
patent: 3162613 (1964-12-01), Tousignant
patent: 4262081 (1981-04-01), Bowden et al.
patent: 4367281 (1983-01-01), Shibayama et al.
patent: 4535054 (1985-08-01), Brault et al.
patent: 4636458 (1987-01-01), Wenzel et al.
Patent Abstracts of Japan, vol. 8, No. 6, (P-247) (1443), Jan. 12, 1984.

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