Semiconductor interconnect interface processing by pulse laser a

Details Semiconductor interconnect interface processing by pulse laser a Semiconductor interconnect interface processing by pulse laser a

1999-01-13

2000-11-07

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, H01L 214763

Patent

active

06143650&

ABSTRACT:
A method is provided for forming tantalum/copper barrier/seed layers in semiconductor channels or vias by using a pulsed laser annealing step. The pulsed laser can be controlled to heat the copper seed material for such short periods of time that the copper seed material does not agglomerate but the temperature is high enough to form an intermixed layer with the tantalum.

REFERENCES:
patent: 5543357 (1996-08-01), Yamada et al.
patent: 5893752 (1999-04-01), Zhang et al.
patent: 5913147 (1999-05-01), Dubin et al.
patent: 5994775 (1999-11-01), Zhao et al.
patent: 6015749 (2000-01-01), Lui et al.

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