Method for forming buried contact

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438233, 438430, 438666, H01L 2174

Patent

active

061435953

ABSTRACT:
A method of forming a buried contact. A substrate has an oxide layer and a first conductive layer thereon, and an isolation region is formed in the first conductive layer, the oxide layer and the substrate. A patterned first mask layer with an opening is formed over the substrate. A portion of the isolation region and a portion of the first conductive layer are exposed. An ion implantation process is performed to form a buried contact within the substrate, and then the portion of the isolation region exposed by the opening is removed to form a trench in the isolation region. The patterned mask layer is removed, and next a second conductive layer is formed over the substrate and fills the trench. The second conductive layer and the first conductive layer are patterned to form a conductive wire and a gate, wherein the conductive wire electrically connects with the buried contact.

REFERENCES:
patent: 5904531 (1999-05-01), Liaw
patent: 5930633 (1999-07-01), Liaw
patent: 5972759 (1999-10-01), Liaw

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