Film patterning method utilizing post-development residue remove

Details Film patterning method utilizing post-development residue remove Film patterning method utilizing post-development residue remove

1999-02-26

2000-11-07

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430313, 430318, 430328, 430331, G03C 500

Patent

active

061434736

ABSTRACT:
A film patterning method using resist as a mask, comprises the steps of forming a film 2 on a substrate 1, coating resist 3 on the film 2, exposing the resist 3, developing the resist 3 by a liquid phase developing solution 4, removing the liquid developing solution 4 from a surface of the film 2, irradiating ultraviolet rays onto the resist 3, which remains on the film 2 by the developing step, in an oxygen containing atmosphere, removing developed residue of the surface of the resist 3 by supplying an alkali aqueous solution 5 to the resist 3 which has remained on the film 2, and forming patterns of the film 2 by etching the film 2 exposed from the resist 3. Accordingly, the unnecessary residue of resist can be removed from the substrate in a short time after the development.

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