Chemically amplified photoresist composition

Details Chemically amplified photoresist composition Chemically amplified photoresist composition

1999-09-20

2000-11-07

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430905, 430910, 526272, 526283, G03C 173, G03F 7029, G03F 7033

Patent

active

061434663

ABSTRACT:
A chemically amplified photoresist composition, having a large etching resistance and excellent adhesion and contrast characteristics, includes a polymer represented by formula (1): ##STR1## wherein R.sub.1 is hydrogen, --OH, --COOH, or aliphatic hydrocarbon having a C.sub.1 -C.sub.20 polar functional group, R.sub.2 is a t-butyl group, a tetrahydropyranyl group or a 1-alkoxyethyl group, l, m and n are integers, l/(l+m+n) equals 0.0 to 0.4, m/(l+m+n) equals 0.5, n/(l+m+n) equals 0.1 to 0.5, and the weight average molecular weight of the polymer is in the range of 3,000 to 100,000.

REFERENCES:
patent: 5843624 (1998-12-01), Houlihan et al.
patent: 6017680 (2000-01-01), Hattori et al.
patent: 6028153 (2000-02-01), Jung
patent: 6063542 (2000-05-01), Hyeon et al.
New Norbornene copolymer resin used in photoresists for the manufacture of semiconductors; Baik et al.; CN 1226565 A, abstract; Aug. 26, 1999.

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