Oxidation method for removing fluorine gas inside polysilicon du

Details Oxidation method for removing fluorine gas inside polysilicon du Oxidation method for removing fluorine gas inside polysilicon du

1996-07-15

1998-09-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438761, 438532, H01L 21265

Patent

active

058113436

ABSTRACT:
A method for manufacturing integrated circuit semiconductor device is provided for doping polysilicon formed on an N-well in a semiconductor substrate. Form a silicon oxide layer on the N-well. Then form a blanket polysilicon layer over the silicon oxide layer and pattern the polysilicon layer into a structure. Form a sacrificial oxide layer over the polysilicon structure. Then ion implant .sup.49 (BF.sub.2).sup.+ ions into the N-well and the polysilicon layer forming the source/drain regions and doping the polysilicon layer with P-type dopant thereby forming a doped polysilicon layer from the polysilicon layer. Then etch the sacrificial oxide layer away from the device. Form a polyoxide layer over the polysilicon structure. Then form a silicon oxide layer over the polyoxide layer followed by forming a glass layer thereover.

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S. Wolf, "Silicon Processing for the VLSI Era-vol. 3" Lattice Press, Sunset Beach, CA. pp. 308, 346, 347 no date.

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