Semiconductor electronic device with autoaligned polysilicon and

Details Semiconductor electronic device with autoaligned polysilicon and Semiconductor electronic device with autoaligned polysilicon and

1996-06-17

1998-09-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, H01L 21336, H01L 213205

Patent

active

058113355

ABSTRACT:
An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a cobalt film deposited on the polycrystalline silicon (4) and on the oxide layer (10). (FIG. 9)

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Wolf, Stanley "Silicon Processing for the VLSI Era vol. 1: Process Technology", Lattice Press, pp. 188-189, 1986.
Ghandhi, Sorab K., "VLSI Fabrication Principles Silicon and Gallium Arsenide", Second Edition, John Wiley & Sons, Inc., pp. 608-610 and 629-663, 551-553, 1994 month unknown.
Narita T., et al., "A high-speed 1-Mbit EPROM with a Ti-silicided gate." IEEE Transactions on Magnetics SC20, No. 1, Feb. 1985, NY, USA, pp. 418-421.
Murao Y., et al., "A high performance CMOS technology with Ti-silicided p
-type poly-SI gates."
IEEE Electron Device Letters, Apr. 1989, USA, vol. 10, No. 4, ISSN 0741-3106, pp. 153-155.
Shenai K., et al., "High-performance vertical-power DMOSFETs with selectively silicided gate and source regions."

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