Method of roughening a polysilicon layer of a random crystal str

Details Method of roughening a polysilicon layer of a random crystal str Method of roughening a polysilicon layer of a random crystal str

1996-01-11

1998-09-22

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 438964, H01L 218242

Patent

active

058113339

ABSTRACT:
On a semiconductor substrate (1), a polysilicon layer (3) of a random crystal structure is formed. The polysilicon layer (3) is treated by an etchant to provide a roughened surface (3a) of the polysilicon layer (3). The roughened surface (3a) is formed along grains of a random crystal structure and extends over all of top and side surfaces of the polysilicon layer (3). Thus, the polysilicon layer (3) serves as a lower electrode (4) having an increased surface area. A capacitor insulator layer (5) is deposited on the lower electrode (4). An upper electrode (6) is deposited on the capacitor insulator layer (5).

REFERENCES:
patent: 4904611 (1990-02-01), Chiang et al.
patent: 5162073 (1992-11-01), Aronoff et al.
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5372962 (1994-12-01), Hirota et al.

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