Formation of a stacked cylindrical capacitor module in the DRAM

Details Formation of a stacked cylindrical capacitor module in the DRAM Formation of a stacked cylindrical capacitor module in the DRAM

1996-09-24

1998-09-22

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438396, 438397, H01L 218242

Patent

active

058113312

ABSTRACT:
The present invention provides a method of manufacturing a cylindrical capacitor which begins by forming an insulating layer and a passivation layer composed of silicon nitride is over a substrate. A plug contact opening is formed through the passivation layer and the insulating layer. The insulating layer in the plug contact opening is selectively wet etched. The wet etching forms an overhanging portion of the passivation layer. A bottom plug is formed in the contact opening. A first dielectric layer having a cylindrical electrode opening is formed over passivation layer and the plug is exposed. A second polysilicon layer is formed over the first dielectric layer and in the cylindrical openings. A second dielectric layer is formed over the second polysilicon layer and in the cylindrical electrode opening. The second dielectric layer and the second polysilicon layer are planarized. The remaining second polysilicon layer in the cylindrical opening forms a cylindrical capacitor electrode over the bottom electrode plug. The first dielectric layer and the second dielectric layer are etched away. The overhang portion 21 of the passivation layer 20 and the bottom polysilicon plug 32 prevent the etch from etching voids in the underlying insulating layer 14 when the cylindrical electrode 50 is misaligned relative to the plug.

REFERENCES:
patent: 5043298 (1991-08-01), Yamada et al.
patent: 5114873 (1992-05-01), Kim et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5196365 (1993-03-01), Gotou
patent: 5332685 (1994-07-01), Park et al.
patent: 5501998 (1996-03-01), Chen

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