Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-05-22

1997-08-12

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438231, 438970, H01L 21336

Patent

active

056565208

ABSTRACT:
A semiconductor device and method for manufacturing same are provided. The method according to the present invention begins by sequentially forming in an element region of a semiconductor substrate a gate insulating film, a gate electrode, and a stopper film. An insulating interlayer is formed on the semiconductor substrate and is subsequently etched to remove it from the element region. An impurity is doped into the semiconductor substrate surrounded by the gate electrode and the insulating interlayer to form lightly doped diffusion layers. A sidewall spacer is formed on the sidewalls of the gate electrode and the insulating interlayer. An impurity is doped into the semiconductor substrate surrounded by the sidewall spacers to form heavily doped diffusion layers. Finally, electrode wiring is formed on the semiconductor device surrounded by the sidewall spacers.

REFERENCES:
patent: 5006477 (1991-04-01), Farb
patent: 5393685 (1995-02-01), Yoo et al.

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