Dynamic random access memory device and a manufacturing method t

Details Dynamic random access memory device and a manufacturing method t Dynamic random access memory device and a manufacturing method t

1994-08-01

1995-09-26

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257308, 257309, H01L 2968

Patent

active

054536332

ABSTRACT:
Disclosed is a dynamic random access memory device (DRAM) having an increased cell capacitance and simplified manufacturing method thereof. The storage electrode the capacitor of the DRAM is connected to a semiconductor substrate through an opening formed in an insulating layer, and has a structure having an outer peripheral wall portion with a laterally extending bottom on the insulating layer and an inner central pillar portion including a hole of a certain depth within the opening in the center of the outer peripheral wall portion. Thus, cell capacitance is greatly increased within a limited unit cell area, its reliability is enhanced, and the manufacturing process is distinctly simplified.

REFERENCES:
patent: 5164337 (1992-11-01), Ogawa et al.

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