Electrically erasable and programmable read only memory device w

Static information storage and retrieval – Read/write circuit – Erase

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36518901, 365900, G11C 1300

Patent

active

052951081

ABSTRACT:
An electrically erasable and programmable read only memory device is responsive to an external command signal for selectively executing an erasing operation, a write-in operation and a verifying operation, and a controller is incorporated in the electrically erasable and programmable read only memory device for producing internal control signals from the external command signal, wherein the external command signal is split into higher order bits and lower order bits both indicative of the external command, and the controller compares the higher order bits with the lower order bits so as to exactly discriminate the external command.

REFERENCES:
patent: 5218607 (1993-06-01), Saito et al.
"28F001BX-T/28F001BX-B 1M(128K.times.8) CMOS Flash Memory", Intel Corporation, Mar. 1991, pp. 1-28.

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