Method for correcting a patterned film using an ion beam

Details Method for correcting a patterned film using an ion beam Method for correcting a patterned film using an ion beam

1993-03-24

1995-04-11

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430 5, 430328, 430329, G03F 700

Patent

active

054057345

ABSTRACT:
Patterned film portions are removed from a surface of a flat substrate by irradiation with a focused ion beam without created undesired scars or processing grooves in the substrate surface. This is achieved by applying a masking substance only onto the substrate surface where it is not covered by the patterned film portions, and then using the focused ion beam to etch away the patterned film portions.

REFERENCES:
patent: 3748975 (1973-07-01), Tarabocchia
patent: 4931307 (1990-06-01), Sugita
patent: 5198377 (1993-03-01), Kato

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