Plasma forming electrode and method of using the same

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, 156643, 118723, 20429831, B01J 1912, H01H 146, C23F 404

Patent

active

050393880

ABSTRACT:
A plasma forming electrode used in pairs disposed in mutually facing spaced parallel relation in a reduced pressure treating chamber, and between which a radio frequency current power is applied to produce a plasma, is formed from preferably highly pure aluminum or an aluminum alloy, and has a chromic acid anodic surface film layer thereon. It has greatly improved durability when used for plasma treatment in the presence of fluorine containing gas.

REFERENCES:
patent: 4419201 (1983-12-01), Levinstein et al.
patent: 4491496 (1985-01-01), Laporte et al.
patent: 4507179 (1985-03-01), Yoshida et al.
patent: 4540449 (1985-09-01), Yoshida et al.
patent: 4939044 (1990-07-01), Ohashi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma forming electrode and method of using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma forming electrode and method of using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma forming electrode and method of using the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1525537

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.