Method of forming diffusion layer and method of manufacturing no

Details Method of forming diffusion layer and method of manufacturing no Method of forming diffusion layer and method of manufacturing no

1995-08-25

1997-06-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438264, H01L 218247

Patent

active

056416962

ABSTRACT:
The first impurity species having a low diffusion rate is heavily doped in a predetermined region of a semiconductor substrate in contact with portions corresponding to the edges of a floating gate, and the second impurity species having a low diffusion rate is lightly doped in the predetermined region from a position separated from the portions corresponding to the edges of the floating gate by a predetermined distance. Annealing is performed such that the second impurity species is diffused below the floating gate more inward than the first impurity species, and part of a diffusion region formed by the first impurity species serves as a tunnel region which overlaps the floating gate. With this structure, a short channel effect can be prevented, and an inter-band current can be suppressed.

REFERENCES:
patent: 4780424 (1988-10-01), Holler et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4978626 (1990-12-01), Poon et al.
patent: 4978629 (1990-12-01), Komori et al.
patent: 5098855 (1992-03-01), Komori et al.
patent: 5426063 (1995-06-01), Kaneko et al.
patent: 5491099 (1996-02-01), Hsu

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