Method to remove residue of metal etch

Details Method to remove residue of metal etch Method to remove residue of metal etch

1996-02-02

1997-06-24

Powell, William

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438705, 438714, 438720, 438734, H01L 2100

Patent

active

056413823

ABSTRACT:
This invention provides a method for removing metal etch residue of silicon nodules, resulting from a small percentage of silicon in the metal, without causing overetch damage to the photoresist pattern, the metal electrode pattern, or to dielectric layers. The metal conductor layer is partially etched leaving from 20 to 80 percent of the original thickness. Any residue of silicon nodules formed during this partial etching is then removed using ion bombardment. The remainder of the metal conductor layer is then etched. A short overetch period is used to remove any remaining residue of silicon nodules. The overetch period is short and there is no deterioration of the photoresist or exposed edges of the electrode pattern.

REFERENCES:
patent: 5100501 (1992-03-01), Blumenthal et al.
patent: 5175125 (1992-12-01), Wong
patent: 5200361 (1993-04-01), Onishi
"Silicon Processing for the VLSI Era-vol. 1" by S. Wolf & R. Tauber, pub by Lattice Press, Sunset Beach, CA,1986, pp. 559-564.

Affiliated with

Also associated with

Rating

Method to remove residue of metal etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to remove residue of metal etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to remove residue of metal etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-147125