Method of fabricating a rugged-crown shaped capacitor

Details Method of fabricating a rugged-crown shaped capacitor Method of fabricating a rugged-crown shaped capacitor

1996-12-05

1998-06-02

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438398, H01L 218242

Patent

active

057598932

ABSTRACT:
A method of fabricating a rugged-crown shaped capacitor on a semiconductor substrate is provided. Specifically, the method can be applied for fabricating a storage capacitor of a DRAM cell. A doped polysilicon layer is deposited on the substrate and patterned to retain the portion of the doped polysilicon layer within a planned region of the capacitor. Next, an undoped polysilicon layer is deposited on the doped polysilicon layer and the substrate and etched back as undoped polysilicon spacers. Then the doped layer and the undoped spacers are selectively etched by a hot H.sub.3 PO.sub.4 solution to form a crown-shaped node of the capacitor with a rugged surface. Then the undoped portion of the crown-shaped node of the capacitor is doped and the rugged-crown shaped node forms a conductive plate of the DRAM capacitor, providing a rugged-crown shaped capacitor having a larger area to increase its capacitance.

REFERENCES:
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5286668 (1994-02-01), Chou
patent: 5578516 (1996-11-01), Chou

Affiliated with

Also associated with

Rating

Method of fabricating a rugged-crown shaped capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a rugged-crown shaped capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a rugged-crown shaped capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1459063