Method for making semiconductor device capable of independently

Details Method for making semiconductor device capable of independently Method for making semiconductor device capable of independently

1996-11-20

1998-06-02

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438232, 438233, 257370, 257378, H01L 218238

Patent

active

057598835

ABSTRACT:
In a method of manufacturing a semiconductor integrated circuit device composed of a bipolar transistor and metal-oxide-semiconductor (MOS) transistors, first and second gate electrode structures are formed to have polysilicon layers having no impurity implanted and to be provided on a gate oxide film. First impurity ions are implanted in self-alignment with said first gate electrode structure to form an N-channel MOS transistor. Second impurity ions are implanted in self-alignment with said second gate electrode structure to form a P-channel MOS transistor after a bipolar transistor is formed.

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