Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-11-26
1998-12-15
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
134 12, 216 67, 430328, 430329, 430331, 438906, 438725, H01L 213065, B08B 700
Patent
active
058496394
ABSTRACT:
A gas plasma process for removing photoresist and etch residues and other contaminants involved in etching vias in integrated circuit devices is disclosed. The process involves placing the substrate having etched vias or contact holes in a suitable low bias reactor; applying to the substrate surface a mixture of gases at low bias selected from the group consisting of oxygen, nitrogen, fluorine, hydrofluorocarbon and fluorinated methane and amine gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water; and rinsing the substrate with deionized water. The plasma process should be carried out at temperatures of less than about 100 degrees C to avoid mobile ion contamination problems and oxidation of the etch residues.
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Molloy Simon John
Vitkavage Daniel Joseph
Breneman R. Bruce
Champagne Donald L.
Lucent Technologies - Inc.
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