Method of fabricating stack capacitor

Details Method of fabricating stack capacitor Method of fabricating stack capacitor

1998-04-30

1999-11-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 438255, H01L 218242

Patent

active

059813377

ABSTRACT:
A method of fabricating a stack capacitor. Using self-aligned method by the formation of spacers on the poly-silicon layer, a stack capacitor is formed by using photo-lithography and etching only once.

REFERENCES:
patent: 5399518 (1995-03-01), Sim et al.
patent: 5438013 (1995-08-01), Kim et al.
patent: 5447881 (1995-09-01), Ryou
patent: 5516719 (1996-05-01), Ryou

Affiliated with

Also associated with

Rating

Method of fabricating stack capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating stack capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating stack capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1455081