Method and apparatus for protecting a device against voltage sur

Details Method and apparatus for protecting a device against voltage sur Method and apparatus for protecting a device against voltage sur

1997-05-12

1999-11-09

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438133, 438220, 438334, H01L 218238

Patent

active

059813237

ABSTRACT:
A structure for the protection of a high-voltage pad includes a lateral bipolar transistor, an N-type diffusion of which, connected to the pad to be protected, is made in an N-type tub with a zone that extends laterally outside the tub in the base. A P-type implantation is made on the entire substrate outside the N-type tub except in the region in which the zone extends.

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1995 Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, Jun. 6-8, 1995, Institute Of Electrical and Electronics Engineers, pp. 85-86, Sharma U., et al., "An ESD Protection Scheme For Deep Sub-Micron ULSI Circuits".

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