Method of forming resist pattern

Details Method of forming resist pattern Method of forming resist pattern

1985-04-09

1986-07-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156655, 1566611, 156904, 204192E, 427 41, 427 431, 430296, 430312, 430313, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

045991375

ABSTRACT:
A method of forming a resist micropattern in the manufacture of semiconductor devices. This method comprises first forming a multilayered resist films on a substrate, the uppermost film of which is selected to be a highly sensitive resist film 0.05 to 1.0 .mu.m in thickness, forming an uppermost resist pattern including a desired patterned groove, forming a mask film only in the groove, and dry etching the resist excluding that beneath the mask film in the groove thereby forming a resist micropattern.

REFERENCES:
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4389281 (1983-06-01), Anantha et al.
patent: 4481049 (1984-11-01), Reichmanis et al.

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