Deep UV photolithography with reduced halation

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430322, 430396, G03C 500

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active

058637095

ABSTRACT:
A pattern forming method includes the steps of preparing an underlie layer having a surface to be processed; coating a resist film on the underlie layer, the resist film including a substance capable ot absorbing light applied during exposure, thereby capable of attenuating light reflected from the surface of said underlie layer during the exposure, in comparison to a resist film not containing the substance; and transferring a pattern of a photomask onto the resist by using a modified illumination system, the photomask, and a projecting lens, the modified illumination system radiating principal light from the direction offset from an optical axis of a condenser lens. Exposure is performed by relieving the influence of light reflection from an underlie layer surface by using resists whose transmittance have been adjusted, and by using a stepper with a modified illumination system. A sufficient depth of focus is obtained and the resolution of the resist is substantially improved. A resist pattern of a good shape can be obtained by relieving the influence of light reflection from the underlie layer surface.

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W.S. DeForest, Photoresist, McGraw-Hill, NY, 1975, p. 134.
Proceedings of SPIE vol. 2197 Optical/Laser Microlithography VII 2-4 Mar. 1994 San Jose, California pp. 637-647. Garza et al.

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