Process for forming silicon oxide film and gate oxide film for M

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257411, H01L 2976

Patent

active

058545050

ABSTRACT:
A process for forming a silicon oxide film comprising:

REFERENCES:
patent: 4007294 (1977-02-01), Woods et al.
patent: 4518630 (1985-05-01), Grasser
patent: 5172203 (1992-12-01), Hayashi
patent: 5506178 (1996-04-01), Suzuki et al.
IEEE Electron Devices Letters, vol. 11, No. 1, Jan. 1990, pp. 3-5 by MacWilliams et al.

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