Method for formation of patterns using high energy beam

Details Method for formation of patterns using high energy beam Method for formation of patterns using high energy beam

1989-04-20

1990-07-31

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430323, 430325, G03C 500

Patent

active

049450280

ABSTRACT:
Disclosed is a method for formation of a resist pattern used in the photo lithography steps for preparing semi-conductor devices and more particularly, a method for formation of a superfine resist pattern which comprises selectively exposing a resist surface of a photosensitive high molecular film to light to modify the exposed area to a hydrophilic property, chemically adsorbing a Si-containing reagent selectively to the modified area and then subjecting to O.sub.2 RIE using the Si-adsorbed film as a mask. The method is also characterized by enabling to formation of a finer pattern formation using a monomolecular film or monomolecular built-up film formed by the LB method or the chemical adsorption method in place of the resist described above.

REFERENCES:
patent: 4539061 (1985-09-01), Sagiv
patent: 4552833 (1985-11-01), Ito et al.
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4618561 (1986-10-01), Munakata et al.

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