Method of formation of semiconductor gate dielectric

Details Method of formation of semiconductor gate dielectric Method of formation of semiconductor gate dielectric

1994-06-09

1998-03-10

Fourson, George R.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438287, 438591, 438762, 438775, H01L 21318

Patent

active

057260877

ABSTRACT:
A semiconductor dielectric (10) is formed by providing a base layer (12) having a surface. A thin interface layer (13) is formed at the surface of the base layer (12). The thin interface layer has a substantial concentration of one of either nitrogen or fluorine. A thermal oxide layer (14) is formed overlying the interface layer (13). A deposited dielectric layer (16) is formed overlying the thermal oxide layer (14). The deposited dielectric layer (16) is optionally densified by a thermal heat cycle. The deposited dielectric layer (16) has micropores that are misaligned to micropores in the thermal oxide layer (14) to provide enhanced features.

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