Static random-access memory having multilevel conductive layer

Details Static random-access memory having multilevel conductive layer Static random-access memory having multilevel conductive layer

1987-07-09

1989-08-01

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, 365 53, 365182, 357 40, G11C 1100, G11C 1134

Patent

active

048538949

ABSTRACT:
A semiconductor memory having static cells each composed of two driver MOS transistors formed on a semiconductor substrate and two transfer MOS transistors and two load resistors, which are formed on the substrate and are connected to the drains of the driver MOS transistors, respectively. A conductive film for fixing the sources of the driver MOS transistors to a ground voltage is formed above the principal surface of the semiconductor substrate, and this conductive film defines one electrode of a capacitance element formed on the substrate. The conductive film is formed over the load resistors formed on the semiconductor substrate so as to constitute an electric field shield for the load resistors.

REFERENCES:
patent: 3518494 (1970-06-01), James
patent: 4609835 (1986-09-01), Sakai et al.
patent: 4653025 (1987-03-01), Minato et al.
patent: 4679171 (1987-07-01), Logwood et al.
patent: 4744056 (1988-05-01), Yu et al.

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