Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1987-07-09
1989-08-01
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Flip-flop
365190, 365 53, 365182, 357 40, G11C 1100, G11C 1134
Patent
active
048538949
ABSTRACT:
A semiconductor memory having static cells each composed of two driver MOS transistors formed on a semiconductor substrate and two transfer MOS transistors and two load resistors, which are formed on the substrate and are connected to the drains of the driver MOS transistors, respectively. A conductive film for fixing the sources of the driver MOS transistors to a ground voltage is formed above the principal surface of the semiconductor substrate, and this conductive film defines one electrode of a capacitance element formed on the substrate. The conductive film is formed over the load resistors formed on the semiconductor substrate so as to constitute an electric field shield for the load resistors.
REFERENCES:
patent: 3518494 (1970-06-01), James
patent: 4609835 (1986-09-01), Sakai et al.
patent: 4653025 (1987-03-01), Minato et al.
patent: 4679171 (1987-07-01), Logwood et al.
patent: 4744056 (1988-05-01), Yu et al.
Ishibashi Koichiro
Kawamoto Yoshifumi
Meguro Satoshi
Minato Osamu
Moriwaki Nobuyuki
Garcia Alfonso
Hecker Stuart N.
Hitachi , Ltd.
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