Method of fabricating a semiconductor read-only memory device ba

Details Method of fabricating a semiconductor read-only memory device ba Method of fabricating a semiconductor read-only memory device ba

1997-04-17

1999-04-06

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438130, 438155, 438589, H01L 218246

Patent

active

058917780

ABSTRACT:
A method for fabricating a semiconductor read-only memory (ROM) device of the type including a plurality of diode-type memory cells is provided. The ROM device is based on a silicon-on-insulation (SOI) structure in which all of the memory cells of the ROM device are formed in an insulating layer over a silicon substrate. The SOI structure allows for the prevention of leakage current between neighboring bit lines. The memory cells of the ROM device are each based on a P-N junction diode, which allows for a higher integration of the memory cells on a single chip than the use of MOSFET-based memory cells. The coding process is also easier to conduct.

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patent: 5403762 (1995-04-01), Takemura
patent: 5460987 (1995-10-01), Wen et al.
patent: 5504025 (1996-04-01), Fong-Chun et al.
patent: 5627091 (1997-05-01), Hong
patent: 5668031 (1997-09-01), Hsue et al.

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