Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-01-26
1999-04-06
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 68, 156345, 118723R, 118723I, 20429815, 20429831, 427569, 438710, 438729, H05H 100
Patent
active
058913483
ABSTRACT:
An apparatus (20) for uniformly processing substrates (25) having a surface with a center (80) and a peripheral edge (85). The apparatus (20) comprises (i) a process chamber (30) having a gas distributor (55) for distributing process gas in the process chamber (30); (ii) a support (75) for supporting a substrate (25) in the process chamber (30); (iii) a plasma generator for forming a plasma from the process gas in the process chamber (30); and (iv) a focus ring (90) in the process chamber (30). The focus ring (90) comprises (a) a wall (95) surrounding the substrate (25) to substantially contain the plasma on the substrate surface, and (b) a channel (100) in the wall (95). The channel (100) has an inlet (105) adjacent to, and extending substantially continuously around the peripheral edge (85) of the substrate surface. The inlet (105) of the channel (100) has a width w sized to allow a sufficient amount of process gas to flow into the channel (100) to maintain substantially equal processing rates at the center (80) and peripheral edge (85) of the substrate surface.
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Ma Diana Xiaobing
Mak Steve S. Y.
Ye Yan
Yin Gerald Zheyao
Applied Materials Inc.
Dang Thi
Janah Ashok K.
Wilson James C.
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