Method to selectively electroplate conductive material into tren

Details Method to selectively electroplate conductive material into tren Method to selectively electroplate conductive material into tren

1998-11-03

2000-07-25

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438644, 438653, 438654, 438672, 438674, 438675, 438678, H01L 2144

Patent

active

060936479

ABSTRACT:
A method of filling trenches in a semiconductor wafer with a conductive material is disclosed by selectively electroplating the semiconductor wafer. The trenches are lined with a barrier layer and a seed layer and the semiconductor wafer is submerged in a solution having ions of the selected conductive material. An electrical potential is applied to the electroplating solution and the semiconductor wafer. The seed layer in the trench causes the conductive material ions to be plated in the trench.

REFERENCES:
patent: 5342806 (1994-08-01), Asahina
patent: 5933758 (1999-08-01), Jain

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