Method of making a capacitor

Details Method of making a capacitor Method of making a capacitor

1997-08-04

2000-03-28

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

060431199

ABSTRACT:
The present invention is directed to fabrication of a capacitor formed with a substantially concave shape and having optional folded or convoluted surfaces. The concave shape optimizes surface area within a small volume and thereby enables the capacitor to hold a significant charge so as to assist in increased miniaturization efforts in the microelectronic field. The capacitor is fabricated in microelectronic fashion consistent with a dense DRAM array. Methods of fabrication include stack building with storage nodes that extend above a semiconductor substrate surface.

REFERENCES:
patent: 5478769 (1995-12-01), Lim
patent: 5478770 (1995-12-01), Kim
patent: 5686337 (1997-11-01), Koh et al.
MacLellan, Andrew, Toshiba On 2nd Generation 16-Meg SDRAMs, Electronic News, Feb. 26, 1996.

Affiliated with

Also associated with

Rating

Method of making a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1325518