Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

1997-05-16

1999-11-16

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438 3, H01L 218242

Patent

active

059857145

ABSTRACT:
A method of forming a capacitor includes, a) providing a node to which electrical connection to a capacitor is to be made; b) providing an electrically conductive first layer over the node; c) providing an electrically insulative barrier second layer over the first conductive layer; d) providing a third layer over the electrically insulative barrier layer, the third layer comprising a material which is either electrically conductive and resistant to oxidation, or forms an electrically conductive material upon oxidation; e) providing an insulating inorganic metal oxide dielectric layer over the electrically conductive third layer; f) providing an electrically conductive fourth layer over the insulating inorganic metal oxide dielectric layer; and g) providing an electrically conductive interconnect to extend over the second insulative layer and electrically interconnect the first and third conductive layers. A capacitor construction having such a dielectric layer in combination with the barrier layer and electrical interconnect of a first capacitor plate is disclosed.

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